Taking Technology to the Next Level
Tegal ProNova - Third generation of ICP
- This source was developed to reach the demand for the MEMS and 3D market, from 100 to 200 mm wafer size
- Yield is the key improvement by improving the uniformity across the wafer and by reducing the ion induced tilt at the wafer edge
- The ProNova source allows higher productivity and superior performance
Tegal ProNova Source Features
ProNova coupled with latest process improvements provides:
- Superior High Aspect Ratio Etch
- Excellent Depth Uniformity (±2.5%)
- Reduce Tilt at Wafer Edge (±0.15°)
- High Selectivity To Photoresist And Silicon Dioxide
- Yield Improvement
- Higher Etch Rate
- High Reliability
- More Cost-Effective Operation
- High-Quality Hardware and Components
- Comprehensive Service & Support
- Backward Compatibility with Earlier Source Generations
- Existing processes in production are easily upgradable to the new ProNova source