903ACS™ Wafer Size: 3", 100mm – 150mm
The Tegal 903ACS™ is a market leader in non-critical via and pad passivation etch processing for the semiconductor industry. The narrow gap RF diode reactor is ideally suited to plasma etch of silicon oxide and silicon nitride materials without the complication of wafer clamps or electrostatics chucks. Applications for the 903ACS serve the traditional CMOS and Bipolar silicon semiconductor industry in addition to GaAs, InP and SiGe compound semiconductors; MEMS; advanced packaging; thin film head; and Bio-Chip nanotechnology.
901ACS™ and 903ACS™ are trademarks of Tegal Corporation